Material Front-end

Material Name Material ID Inventory Institution Faculty Member
Ni1Cu1/C 48fb97ee7926 0.05g University of Pennsylvania C. Murray
Pt/C 48fb97ee7925 0.05g University of Pennsylvania C. Murray
Pt/C 890ff3559f24 0.08g University of Pennsylvania C. Murray
10wt% Pt 5wt% WOx/C f132d6c0d223 0.69g University of Pennsylvania R. Gorte
Pt WOx/C 10R ALD f132d6c0d222 0.35g University of Pennsylvania R. Gorte
Pt WOx/C 4R ALD f132d6c0d221 0.37g University of Pennsylvania R. Gorte
1R-WOx-Nano-Pt/C f132d6c0d220 0.4g University of Pennsylvania R. Gorte
Pd-ZSM5 6a49087ff14 0.1g University of Delaware B. Xu
Sn-BEA (recrystalline method) 6a49087ff13 0.1g University of Massachusetts-Amherst W. Fan
Ir-ReOx/SiO2 6a49087ff12 0.2g University of Delaware D. Vlachos
10P-SiO2 6a49087ff11 0.2g University of Delaware D. Vlachos
Ir-MoOx/SiO2 6a49087ff1 0.2g University of Delaware D. Vlachos
Sn-inserted pillared MWW with Si/Sn=125 68951B 0.2g Johns Hopkins University M. Tsapatsis
IGO (graphene oxide) e71fcc5ae92154 0.201g University of Delaware B. Saha
Zr-BEA 77811 0.299g University of Massachusetts-Amherst W. Fan
3DOM carbon 83731 0.3g University of Massachusetts-Amherst W. Fan
H-Y Zeolite 87881 0.5g University of Minnesota P. Dauenhauer
Sn-MWW 3-79-2 (Si/Sn 83) 68951A 0.2g Johns Hopkins University M. Tsapatsis
P-BEA (Si/P – 27) e71fcc5ae92145 0.3g University of Massachusetts-Amherst W. Fan
Sn-BEA (F- free method) e71fcc5ae92144 100g University of Massachusetts-Amherst W. Fan
Sn-BEA (seeded growth method) 77811 0.1g University of Massachusetts-Amherst W. Fan
3DOM-i-Sn-MFI 71273 0.22g University of Massachusetts-Amherst W. Fan
Sn-MFI 19307 0.5g California Institute of Technology M. Davis
Sn-Spp 33557 0.15g Johns Hopkins University M. Tsapatsis
Sn-MCM-41 33339 0.2g Johns Hopkins University M. Tsapatsis
Sn-BEA 34718 0.2g Johns Hopkins University M. Tsapatsis
H-BEA Zeolite 87880 0.5g University of Minnesota P. Dauenhauer
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